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The momentum and spin of charge carriers in the topological insulators are constrained to be perpendicular to each other due to the strong spin–orbit coupling. We have investigated this unique spin–momentum locking property in Sb 2 Te 3 topological insulator nanowires by injecting spin-polarized electrons through magnetic tunnel junction electrodes. Non-local voltage measurements exhibit an asymmetry with respect to the magnetic field applied perpendicular to the nanowire channel, which is remarkably different from that of a non-local measurement in a channel that lacks spin–momentum locking. In stark contrast to conventional non-local spin valves, simultaneous reversal of magnetic moments of all magnetic contacts to the Sb 2 Te 3 nanowire alters the non-local voltage. This unusual asymmetry is a clear signature of the spin–momentum locking in the Sb 2 Te 3 nanowire surface states. 

Spin-orbit torque nano-oscillators based on bilayers of ferromagnetic and nonmagnetic metals are ultra-compact current-controlled microwave signal sources. They are attractive for practical applications such as microwave assisted magnetic recording, neuromorphic computing, and chip-to-chip wireless communications. However, a major drawback of these devices is low output microwave power arising from the relatively small anisotropic magnetoresistance of the ferromagnetic layer. Here we experimentally show that the output power of a spin-orbit torque nano-oscillator can be significantly enhanced without compromising its structural simplicity. Addition of a ferromagnetic reference layer to the oscillator allows us to employ current-in-plane giant magnetoresistance to boost the output power of the device. This enhancement of the output power is a result of both large magnitude of giant magnetoresistance compared to that of anisotropic magnetoresistance and their different angular dependencies. Our results hold promise for practical applications of spin-orbit torque nano-oscillators.